真空退火設備

所屬分類：

第一代半導體工藝設備

概要：

◆ 主要用于半導體器件退火及燒結等工藝，可進行真空、氣體保護等 ◆ 設備結構新穎,操作方便 ◆ 在一臺設備上可以完成多個工藝流程

關鍵詞：

真空退火

真空退火設備

產品概述/Product Introduction：

♦ 主要用于半導體器件退火及燒結等工藝，可進行真空、氣體保護等

Mainly used for annealing and sintering of semiconductor devices, and can be protected by vacuum and gas

♦ 設備結構新穎，操作方便

The equipment has novel structure and convenient operation

♦ 在一臺設備上可以完成多個工藝流程

Multiple process flows can be completed on one equipment

產品特點/Product Characteristics：

♦ 自動化程度高

High degree of automation

♦ 采用進口溫度控制器，溫控器能受控運行、停止、保持，靈活控制工藝溫度變化

Adopting imported temperature controller, the temperature controllercan be controlled to run, stop andmaintain, and flexibly control the process temperature change

♦ 電氣元器件采用進口知名品牌元器件，保證了設備具有較好的穩(wěn)定性、可靠性

The electrical components are imported well-known brand components, which ensures good stability andreliability of the equipment

♦ 處理全過程由工業(yè)計算機智能化自動控制化能夠實現全程監(jiān)控、跟蹤、自診斷功能、模擬顯示設備的工作狀態(tài)，升溫和降溫速度可控

The whole processing process is controlled by industrial computer intelligently and automatically, which canrealize the functions of whole process monitoring,tracking and self-diagnosis, simulate and display the workingstate of equipment, and control the heating and cooling speed

技術指標/Technical Indicators：

最高溫度:200-800℃

Maximum temperature: 200-800℃

恒溫區(qū):1200mm(長度可定制)

Constant temperature zone: 1200mm (length can be customized)

控溫精度:±1℃

Temperature control accuracy: ± 1℃

真空室:2-3工位

Vacuum chamber: 2-3 stations

真空度:≤5*10^-4*pa

Vacuum degree:≤5*10^-4*pa

升溫速率:15℃/min