產(chǎn)品分類
LPCVD 臥式爐管設(shè)備
所屬分類：
第三代半導(dǎo)體工藝設(shè)備
概要：
LPCVD設(shè)備是半導(dǎo)體集成電路制造的重要設(shè)備之一，主要用于Poly, D/P Poly, SiN,SiO2薄膜的生長(zhǎng)。
關(guān)鍵詞：
LPCVD (立式/臥式)
LPCVD 臥式爐管設(shè)備
產(chǎn)品概述/Product Introduction：
♦ LPCVD設(shè)備是半導(dǎo)體集成電路制造的重要設(shè)備之一，主要用于Poly, D/P Poly, SiN,SiO2薄膜的生長(zhǎng)。
LPCVD equipment is one of the important equipments for semiconductor integrated circuit manufacturing.which is mainly used for the growth of Poly, D/P Poly, SiN,SiO2 thin films
產(chǎn)品特點(diǎn)/Product Characteristics：
♦裝載采用碳化硅(SiC)懸臂槳，避免了與工藝管磨擦產(chǎn)生粉塵
Silicon carbide (SiC) cantilever paddle is used for loading, which avoids dust generated by friction with process pipe
♦溫度控制采用串級(jí)控制方式，對(duì)基片實(shí)際溫度進(jìn)行實(shí)時(shí)智能控制
The temperature control adopts cascade control mode, and the real-time intelligent control of the actual temperature of the substrate is carried out
♦工作壓力閉環(huán)自動(dòng)控制，提高工藝穩(wěn)定性和重復(fù)性
Closed-loop automatic control of chamber pressure improves process stability and repeatability
♦可根據(jù)客戶需求配置多工藝組合的機(jī)臺(tái)
Multi-process combination of machines according to customer demand
技術(shù)指標(biāo)/Technical Indicators：
|
晶片尺寸：6/8英寸晶圓 Wafer size: 6/8 inch wafer |
制程溫度范圍：500°C-900°C Process temperature range: 500°C-900°C |
|
恒溫區(qū)長(zhǎng)度：≥800mm Length of constant temperature zone: ≥ 800 mm |
控溫精度：±1°C Temperature control accuracy: ±1°C |
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